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| MCP1827/MCP1827S 1.5A, Low Voltage, Low Quiescent Current LDO Regulator Features * 1.5A Output Current Capability * Input Operating Voltage Range: 2.3V to 6.0V * Adjustable Output Voltage Range: 0.8V to 5.0V (MCP1827 only) * Standard Fixed Output Voltages: - 0.8V, 1.2V, 1.8V, 2.5V, 3.0V, 3.3V, 5.0V * Other Fixed Output Voltage Options Available Upon Request * Low Dropout Voltage: 330 mV Typical at 1.5A * Typical Output Voltage Tolerance: 0.5% * Stable with 1.0 F Ceramic Output Capacitor * Fast response to Load Transients * Low Supply Current: 120 A (typ) * Low Shutdown Supply Current: 0.1 A (typ) (MCP1827 only) * Fixed Delay on Power Good Output (MCP1827 only) * Short Circuit Current Limiting and Overtemperature Protection * 5-Lead Plastic DDPAK, 5-Lead TO-220 Package Options (MCP1827) * 3-Lead Plastic DDPAK, 3-Lead TO-220 Package Options (MCP1827S) Description The MCP1827/MCP1827S is a 1.5A Low Dropout (LDO) linear regulator that provides high current and low output voltages. The MCP1827 comes in a fixed or adjustable output voltage version, with an output voltage range of 0.8V to 5.0V. The 1.5A output current capability, combined with the low output voltage capability, make the MCP1827 a good choice for new sub-1.8V output voltage LDO applications that have high current demands. The MCP1827S is a 3-pin fixed voltage version. The MCP1827/MCP1827S is based upon the MCP1727 LDO device. The MCP1827/MCP1827S is stable using ceramic output capacitors that inherently provide lower output noise and reduce the size and cost of the entire regulator solution. Only 1 F of output capacitance is needed to stabilize the LDO. Using CMOS construction, the quiescent current consumed by the MCP1827/MCP1827S is typically less than 120 A over the entire input voltage range, making it attractive for portable computing applications that demand high output current. The MCP1827 versions have a Shutdown (SHDN) pin. When shut down, the quiescent current is reduced to less than 0.1 A. On the MCP1827 fixed output versions the scaled-down output voltage is internally monitored and a power good (PWRGD) output is provided when the output is within 92% of regulation (typical). The PWRGD delay is internally fixed at 200 s (typical). The overtemperature and short circuit current-limiting provide additional protection for the LDO during system fault conditions. Applications * * * * * * High-Speed Driver Chipset Power Networking Backplane Cards Notebook Computers Network Interface Cards Palmtop Computers 2.5V to 1.XV Regulators Package Types 5-LD DDPAK 5-LD TO-220 3-LD DDPAK 3-LD TO-220 Fixed/Adjustable MCP1827 MCP1827 12345 SHDN VIN GND(TAB) VOUT PWRGD MCP1827S 1 VIN 2 GND(TAB) 3 VOUT MCP1827S 12345 SHDN VIN GND(TAB) VOUT ADJ 1 VIN 2 GND(TAB) 3 VOUT (c) 2007 Microchip Technology Inc. DS22001C-page 1 MCP1827/MCP1827S Typical Application MCP1827 Fixed Output Voltage PWRGD On Off VIN = 2.3V to 2.8V C1 4.7 F SHDN VIN GND 12345 R1 100 k VOUT VOUT = 1.8V @ 1A C2 1 F MCP1827 Adjustable Output Voltage VADJ R2 20 k On Off VIN = 2.3V to 2.8V C1 4.7 F SHDN VIN GND 12345 R1 40 k VOUT VOUT = 1.2V @ 1A C2 1 F DS22001C-page 2 (c) 2007 Microchip Technology Inc. MCP1827/MCP1827S Functional Block Diagram - Adjustable Output PMOS VIN VOUT Undervoltage Lock Out (UVLO) ISNS Cf Rf ADJ SHDN Driver w/limit and SHDN SHDN VREF V IN SHDN Soft-Start Comp GND 92% of VREF TDELAY Reference + EA - Overtemperature Sensing (c) 2007 Microchip Technology Inc. DS22001C-page 3 MCP1827/MCP1827S Functional Block Diagram - Fixed Output (5 pin) PMOS VIN VOUT Undervoltage Lock Out (UVLO) Sense ISNS Cf Rf SHDN Overtemperature Sensing Driver w/limit and SHDN SHDN VREF V IN SHDN Soft-Start Comp GND 92% of VREF TDELAY Reference PWRGD + EA - DS22001C-page 4 (c) 2007 Microchip Technology Inc. MCP1827/MCP1827S Functional Block Diagram - Fixed Output (3-Pin) PMOS VIN VOUT Undervoltage Lock Out (UVLO) Sense ISNS Cf Rf SHDN Overtemperature Sensing Driver w/limit and SHDN SHDN VREF VIN SHDN Soft-Start Comp GND 92% of VREF TDELAY Reference + EA - (c) 2007 Microchip Technology Inc. DS22001C-page 5 MCP1827/MCP1827S 1.0 ELECTRICAL CHARACTERISTICS Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings VIN ....................................................................................6.5V Maximum Voltage on Any Pin .. (GND - 0.3V) to (VDD + 0.3)V Maximum Power Dissipation......... Internally-Limited (Note 6) Output Short Circuit Duration ................................Continuous Storage temperature .....................................-65C to +150C Maximum Junction Temperature, TJ ........................... +150C ESD protection on all pins (HBM/MM) ........... 2 kV; 200V AC/DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, VIN = VOUT(MAX) + VDROPOUT(MAX) Note 1, VR=1.8V for Adjustable Output, IOUT = 1 mA, CIN = COUT = 4.7 F (X7R Ceramic), TA = +25C. Boldface type applies for junction temperatures, TJ (Note 7) of -40C to +125C Parameters Input Operating Voltage Input Quiescent Current Input Quiescent Current for SHDN Mode Maximum Output Current Line Regulation Load Regulation Output Short Circuit Current Sym VIN Iq ISHDN IOUT Min 2.3 -- -- 1.5 -- -1.0 -- 120 0.1 -- 0.05 0.5 2.2 Typ Max 6.0 220 3 -- 0.16 1.0 -- Units V A A A %/V % A Note 1 IL = 0 mA, VIN = Note 1, VOUT = 0.8V to 5.0V SHDN = GND VIN = 2.3V to 6.0V VR = 0.8V to 5.0V, Note 1 (Note 1) VIN 6V IOUT = 1 mA to 1.5A, VIN = Note 1, (Note 4) VIN = Note 1, RLOAD < 0.1, Peak Current VIN = 2.3V to VIN = 6.0V, IOUT = 1 mA VIN = 6.0V, VADJ = 0V to 6V Note 3 Conditions VOUT/ (VOUT x VIN) VOUT/VOUT IOUT_SC Adjust Pin Characteristics (Adjustable Output Only) Adjust Pin Reference Voltage Adjust Pin Leakage Current Adjust Temperature Coefficient Note 1: 2: 3: 4: 5: 6: VADJ IADJ TCVOUT 0.402 -10 -- 0.410 0.01 40 0.418 +10 -- V nA ppm/C Fixed-Output Characteristics (Fixed Output Only) The minimum VIN must meet two conditions: VIN 2.3V and VIN VOUT(MAX) + VDROPOUT(MAX). VR is the nominal regulator output voltage for the fixed cases. VR = 1.2V, 1.8V, etc. VR is the desired set point output voltage for the adjustable cases. VR = VADJ * ((R1/R2)+1). Figure 4-1. TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * Temperature). VOUT-HIGH is the highest voltage measured over the temperature range. VOUT-LOW is the lowest voltage measured over the temperature range. Load regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested over a load range from 1 mA to the maximum specified output current. Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its nominal value that was measured with an input voltage of VIN = VOUTMAX + VDROPOUT(MAX). The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air. (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum +150C rating. Sustained junction temperatures above 150C can impact device reliability. The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature over the ambient temperature is not significant. 7: DS22001C-page 6 (c) 2007 Microchip Technology Inc. MCP1827/MCP1827S AC/DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise noted, VIN = VOUT(MAX) + VDROPOUT(MAX) Note 1, VR=1.8V for Adjustable Output, IOUT = 1 mA, CIN = COUT = 4.7 F (X7R Ceramic), TA = +25C. Boldface type applies for junction temperatures, TJ (Note 7) of -40C to +125C Parameters Voltage Regulation Dropout Characteristics Dropout Voltage Power Good Characteristics PWRGD Input Voltage Operating Range VPWRGD_VIN 1.0 1.2 VPWRGD_TH 89 90 PWRGD Threshold Hysteresis PWRGD Output Voltage Low PWRGD Leakage PWRGD Time Delay Detect Threshold to PWRGD Active Time Delay Shutdown Input Logic High Input Logic Low Input SHDN Input Leakage Current AC Performance Output Delay From SHDN Output Noise TOR eN -- 100 2.0 -- s V/Hz SHDN = GND to VIN VOUT = GND to 95% VR IOUT = 200 mA, f = 1 kHz, COUT = 10 F (X7R Ceramic), VOUT = 2.5V VSHDN-HIGH VSHDN-LOW SHDNILK -0.1 0.001 45 15 +0.1 %VIN %VIN A VIN = 2.3V to 6.0V VIN = 2.3V to 6.0V VIN = 6V, SHDN =VIN, SHDN = GND VPWRGD_HYS VPWRGD_L PWRGD_LK TPG TVDET-PWRGD 1.0 -- -- -- -- 92 92 2.0 0.2 1 200 200 95 94 3.0 0.4 -- -- -- %VOUT V nA s s IPWRGD SINK = 1.2 mA, ADJ = 0V VPWRGD = VIN = 6.0V Rising Edge RPULLUP = 10 k VADJ or VOUT = VPWRGD_TH + 20 mV to VPWRGD_TH - 20 mV -- -- 6.0 6.0 %VOUT V TA = +25C TA = -40C to +125C For VIN < 2.3V, ISINK = 100 A PWRGD Threshold Voltage (Referenced to VOUT) Falling Edge VOUT < 2.5V Fixed, VOUT = Adj. VOUT >= 2.5V Fixed VIN-VOUT -- 330 600 mV Note 5, IOUT = 1.5A, VIN(MIN) = 2.3V Sym VOUT Min VR - 2.5% Typ VR 0.5% Max VR + 2.5% Units V Note 2 Conditions Note 1: 2: 3: 4: 5: 6: 7: The minimum VIN must meet two conditions: VIN 2.3V and VIN VOUT(MAX) + VDROPOUT(MAX). VR is the nominal regulator output voltage for the fixed cases. VR = 1.2V, 1.8V, etc. VR is the desired set point output voltage for the adjustable cases. VR = VADJ * ((R1/R2)+1). Figure 4-1. TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * Temperature). VOUT-HIGH is the highest voltage measured over the temperature range. VOUT-LOW is the lowest voltage measured over the temperature range. Load regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested over a load range from 1 mA to the maximum specified output current. Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its nominal value that was measured with an input voltage of VIN = VOUTMAX + VDROPOUT(MAX). The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air. (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum +150C rating. Sustained junction temperatures above 150C can impact device reliability. The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature over the ambient temperature is not significant. (c) 2007 Microchip Technology Inc. DS22001C-page 7 MCP1827/MCP1827S AC/DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise noted, VIN = VOUT(MAX) + VDROPOUT(MAX) Note 1, VR=1.8V for Adjustable Output, IOUT = 1 mA, CIN = COUT = 4.7 F (X7R Ceramic), TA = +25C. Boldface type applies for junction temperatures, TJ (Note 7) of -40C to +125C Parameters Power Supply Ripple Rejection Ratio Sym PSRR Min -- Typ 60 Max -- Units dB Conditions f = 100 Hz, COUT = 10 F, IOUT = 10 mA, VINAC = 30 mV pk-pk, CIN = 0 F IOUT = 100 A, VOUT = 1.8V, VIN = 2.8V IOUT = 100 A, VOUT = 1.8V, VIN = 2.8V Thermal Shutdown Temperature Thermal Shutdown Hysteresis Note 1: 2: 3: 4: 5: 6: TSD -- -- 150 10 -- -- C C TSD 7: The minimum VIN must meet two conditions: VIN 2.3V and VIN VOUT(MAX) + VDROPOUT(MAX). VR is the nominal regulator output voltage for the fixed cases. VR = 1.2V, 1.8V, etc. VR is the desired set point output voltage for the adjustable cases. VR = VADJ * ((R1/R2)+1). Figure 4-1. TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * Temperature). VOUT-HIGH is the highest voltage measured over the temperature range. VOUT-LOW is the lowest voltage measured over the temperature range. Load regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested over a load range from 1 mA to the maximum specified output current. Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its nominal value that was measured with an input voltage of VIN = VOUTMAX + VDROPOUT(MAX). The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air. (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum +150C rating. Sustained junction temperatures above 150C can impact device reliability. The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature over the ambient temperature is not significant. TEMPERATURE SPECIFICATIONS Electrical Specifications: Unless otherwise indicated, all limits apply for VIN = 2.3V to 6.0V. Parameters Temperature Ranges Operating Junction Temperature Range Maximum Junction Temperature Storage Temperature Range Thermal Package Resistances Thermal Resistance, 5LD DDPAK Thermal Resistance, 3LD DDPAK Thermal Resistance, 5LD TO-220 Thermal Resistance, 3LD TO-220 JA JA JA JA -- -- -- -- 31.2 31.4 29.3 29.4 -- -- -- -- C/W C/W C/W C/W 4-Layer JC51 Standard Board 4-Layer JC51 Standard Board 4-Layer JC51 Standard Board 4-Layer JC51 Standard Board TJ TJ TA -40 -- -65 -- -- -- +125 +150 +150 C C C Steady State Transient Sym Min Typ Max Units Conditions DS22001C-page 8 (c) 2007 Microchip Technology Inc. MCP1827/MCP1827S 2.0 Note: TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, VOUT = 1.8V (Adjustable), VIN = 2.8V, COUT = 4.7 F Ceramic (X7R), CIN = 4.7 F Ceramic (X7R), IOUT = 1 mA, Temperature = +25C, VIN = VOUT + 0.6V, RPWRGD = 10 k To VIN. Note: Junction Temperature (TJ) is approximated by soaking the device under test to an ambient temperature equal to the desired Junction temperature. The test time is small enough such that the rise in Junction temperature over the Ambient temperature is not significant. 150 Quiescent Current (A) 140 130 120 110 100 90 2 3 4 Input Voltage (V) 5 6 130C 90C 25C -45C VOUT = 1.2V Adj IOUT = 0 mA 0.1 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 Line Regulation (%/V) VOUT = 1.2V adj VIN = 2.3V to 6.0V IOUT = 1 mA IOUT = 1000 mA IOUT = 100 mA IOUT = 500 mA -45 -20 5 30 55 80 105 130 Temperature (C) FIGURE 2-1: Quiescent Current vs. Input Voltage (1.2V Adjustable). 200 190 180 170 160 150 140 130 120 110 100 0 FIGURE 2-4: Line Regulation vs. Temperature (1.2V Adjustable). 0.15 IOUT = 1.0 mA to 1500 mA VIN=5.0V Ground Current (A) Load Regulation (%) 0.10 0.05 0.00 -0.05 -0.10 -0.15 VOUT = 3.3V VOUT = 0.8V VOUT = 5.0V VOUT = 1.8V VIN=3.3V VOUT = 1.2V Adj VIN=2.3V 250 500 750 1000 1250 1500 -45 -20 5 30 55 80 105 130 Load Current (mA) Temperature (C) FIGURE 2-2: Ground Current vs. Load Current (1.2V Adjustable). 140 Quiescent Current (A) 135 130 125 120 115 110 105 100 -45 -20 5 30 55 80 105 130 Temperature (C) VIN=5.0V VIN=4.0V VIN=2.5V FIGURE 2-5: Load Regulation vs. Temperature (Adjstable Version). 0.411 Adjust Pin Voltage (V) IOUT = 0 mA VOUT = 1.2V Adj 0.410 0.410 0.409 0.409 VIN = 6.0V VIN = 5.0V VIN = 2.3V IOUT = 1.0 mA 0.408 -45 -20 5 30 55 80 105 130 Temperature (C) FIGURE 2-3: Quiescent Current vs. Junction Temperature (1.2V Adjustable). (c) 2007 Microchip Technology Inc. FIGURE 2-6: Temperature. Adjust Pin Voltage vs. DS22001C-page 9 MCP1827/MCP1827S Note: Unless otherwise indicated, VOUT = 1.8V (Adjustable), VIN = 2.8V, COUT = 4.7 F Ceramic (X7R), CIN = 4.7 F Ceramic (X7R), IOUT = 1 mA, Temperature = +25C, VIN = VOUT + 0.6V, RPWRGD = 10 k To VIN. 0.35 Dropout Voltage (V) 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 250 500 750 1000 1250 1500 Load Current (mA) VOUT = 2.5V Adj VOUT = 5.0V Adj 150 Quiescent Current (A) 140 130 120 110 100 90 80 2 VOUT = 0.8V IOUT = 0 mA +130C +85C +25C -45C 3 4 Input Voltage (V) 5 6 FIGURE 2-7: Dropout Voltage vs. Load Current (Adjustable Version). 0.42 Dropout Voltage (V) 0.40 0.38 0.36 0.34 0.32 0.30 -45 -20 5 30 55 80 105 130 Temperature (C) VOUT = 3.3V Adj VOUT = 2.5V Adj VOUT = 5.0V Adj FIGURE 2-10: Quiescent Current vs. Input Voltage (0.8V Fixed). 150 Quiescent Current (A) 140 130 120 110 100 90 80 3 3.5 4 4.5 5 5.5 6 Input Voltage (V) -45C IOUT = 1.5A VOUT = 2.5V IOUT = 0 mA +130C +90C +25C FIGURE 2-8: Dropout Voltage vs. Temperature (Adjustable Version). 370 360 350 340 330 320 310 300 -45 -20 5 30 55 80 105 130 Temperature (C) VIN = 5.0V VIN = 3.9V VIN = 4.5V FIGURE 2-11: Quiescent Current vs. Input Voltage (2.5V Fixed). 250.00 Ground Current (A) 200.00 VOUT=0.8V Power Good Time Delay (s) VOUT = 3.3V Fixed 150.00 100.00 50.00 0.00 0 250 500 750 1000 1250 1500 Load Current (mA) VOUT=2.5V VIN = 2.3V for VR=0.8V VIN = 3.1V for VR=2.5V FIGURE 2-9: Power Good (PWRGD) Time Delay vs. Temperature (Adjustable Version). FIGURE 2-12: Current. Ground Current vs. Load DS22001C-page 10 (c) 2007 Microchip Technology Inc. MCP1827/MCP1827S Note: Unless otherwise indicated, VOUT = 1.8V (Adjustable), VIN = 2.8V, COUT = 4.7 F Ceramic (X7R), CIN = 4.7 F Ceramic (X7R), IOUT = 1 mA, Temperature = +25C, VIN = VOUT + 0.6V, RPWRGD = 10 k To VIN. 130 Quiescent Current (A) 125 120 115 110 105 100 95 -45 VOUT = 0.8V IOUT = 0 mA 0.045 Line Regulation (%/V) 0.040 IOUT = 1 mA VR = 2.5V VIN = 3.1 to 6.0V 0.035 0.030 0.025 0.020 0.015 IOUT = 1500 mA IOUT = 100 mA IOUT = 1000 mA IOUT = 500 mA VOUT = 2.5V -20 5 30 55 80 105 130 -45 -20 5 30 55 80 105 130 Temperature (C) Temperature (C) FIGURE 2-13: Temperature. 0.30 0.25 Ishdn (A) 0.20 0.15 0.10 0.05 0.00 -45 -20 5 Quiescent Current vs. FIGURE 2-16: Line Regulation vs. Temperature (2.5V Fixed). VR = 0.8V 0.30 Load Regulation (%) 0.20 0.10 0.00 -0.10 -0.20 -0.30 -45 -20 5 30 55 80 IOUT = 1 mA to 1500 mA VOUT = 0.8V VIN = 2.3V VIN = 6.0V VIN = 4.0V VIN = 2.3V 30 55 80 105 130 105 130 Temperature (C) Temperature (C) FIGURE 2-14: ISHDN vs. Temperature. FIGURE 2-17: Load Regulation vs. Temperature (VOUT < 2.5V Fixed). 0.00 -0.05 Load Regulation (%) 0.10 Line Regulation (%/V) 0.08 0.06 0.04 0.02 0.00 -45 -20 5 30 55 80 105 130 Temperature (C) IOUT = 1A IOUT = 100 mA IOUT = 500mA VOUT = 0.8V VIN = 2.3V to 6.0V IOUT = 1 mA IOUT = 1 mA to 1500 mA VOUT = 2.5V -0.10 -0.15 -0.20 -0.25 -0.30 -0.35 -0.40 -0.45 -45 VOUT = 5.0V -20 5 30 55 80 105 130 Temperature (C) FIGURE 2-15: Line Regulation vs. Temperature (0.8V Fixed). FIGURE 2-18: Load Regulation vs. Temperature (VOUT 2.5V Fixed). (c) 2007 Microchip Technology Inc. DS22001C-page 11 MCP1827/MCP1827S Note: Unless otherwise indicated, VOUT = 1.8V (Adjustable), VIN = 2.8V, COUT = 4.7 F Ceramic (X7R), CIN = 4.7 F Ceramic (X7R), IOUT = 1 mA, Temperature = +25C, VIN = VOUT + 0.6V, RPWRGD = 10 k To VIN. 0.40 0.35 Dropout Voltage (V) 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 250 500 750 1000 1250 1500 Load Current (mA) VOUT = 5.0V Temperature = 25C VOUT = 2.5V 10.000 VR=0.8V, VIN=2.3V COUT=1 F ceramic X7R CIN=10 F ceramic IOUT=200 mA Noise (V/ Hz) 1.000 VR=3.3V, VIN=4.1V 0.100 0.010 0.01 0.1 1 10 Frequency (kHz) 100 1000 FIGURE 2-19: Current. 0.45 Dropout Voltage (V) 0.40 Dropout Voltage vs. Load FIGURE 2-22: Output Noise Voltage Density vs. Frequency. 0 -10 -20 PSRR (dB) -30 -40 -50 -60 -70 -80 0.01 VR=1.2V Adj COUT=10 F ceramic X7R VIN=3.1V CIN=0 F IOUT=10 mA IOUT = 1.5A 0.35 0.30 VOUT = 5.0V VOUT = 2.5V 0.25 -45 -20 5 30 55 80 105 130 Temperature (C) 0.1 1 10 Frequency (kHz) 100 1000 FIGURE 2-20: Temperature. Dropout Voltage vs. FIGURE 2-23: Power Supply Ripple Rejection (PSRR) vs. Frequency (VOUT = 1.2V Adj.). 0 -10 -20 PSRR (dB) -30 -40 -50 -60 -70 -80 0.01 0.1 VR=1.2V Adj COUT=22 F ceramic X7R VIN=3.1V CIN=0 F IOUT=10 mA 3.00 Short Circuit Current (A) 2.50 2.00 1.50 1.00 0.50 0.00 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Input Voltage (V) VOUT = 2.5V Temperature = 25C 1 10 Frequency (kHz) 100 1000 FIGURE 2-21: Input Voltage. Short Circuit Current vs. FIGURE 2-24: Power Supply Ripple Rejection (PSRR) vs. Frequency (VOUT = 1.2V Adj.). DS22001C-page 12 (c) 2007 Microchip Technology Inc. MCP1827/MCP1827S Note: Unless otherwise indicated, VOUT = 1.8V (Adjustable), VIN = 2.8V, COUT = 4.7 F Ceramic (X7R), CIN = 4.7 F Ceramic (X7R), IOUT = 1 mA, Temperature = +25C, VIN = VOUT + 0.6V, RPWRGD = 10 k To VIN. 0 -10 -20 PSRR (dB) -30 -40 -50 -60 -70 -80 0.01 0.1 VR=3.3V Fixed COUT=10 F ceramic X7R VIN=3.9V CIN=0 F IOUT=10 mA 1 10 Frequency (kHz) 100 1000 FIGURE 2-25: Power Supply Ripple Rejection (PSRR) vs. Frequency (VOUT = 3.3V Fixed). 0 -10 -20 PSRR (dB) -30 -40 -50 -60 -70 -80 0.01 0.1 VR=3.3V Fixed COUT=22 F ceramic X7R VIN=3.9V CIN=0 F IOUT=10 mA FIGURE 2-28: Shutdown. 2.5V (Adj.) Startup from 1 10 Frequency (kHz) 100 1000 FIGURE 2-26: Power Supply Ripple Rejection (PSRR) vs. Frequency (VOUT = 3.3V Fixed). FIGURE 2-29: Timing. Power Good (PWRGD) FIGURE 2-27: 2.5V (Adj.) Startup from VIN. FIGURE 2-30: (3.3V Fixed). Dynamic Line Response (c) 2007 Microchip Technology Inc. DS22001C-page 13 MCP1827/MCP1827S Note: Unless otherwise indicated, VOUT = 1.8V (Adjustable), VIN = 2.8V, COUT = 4.7 F Ceramic (X7R), CIN = 4.7 F Ceramic (X7R), IOUT = 1 mA, Temperature = +25C, VIN = VOUT + 0.6V, RPWRGD = 10 k To VIN. FIGURE 2-31: Dynamic Load Response (3.3V Fixed, 10 mA to 1500 mA). FIGURE 2-32: Dynamic Load Response (3.3V Fixed, 100 mA to 1500 mA). DS22001C-page 14 (c) 2007 Microchip Technology Inc. MCP1827/MCP1827S 3.0 PIN DESCRIPTION PIN FUNCTION TABLE 5-Pin Fixed Output 1 2 3 4 5 -- The descriptions of the pins are listed in Table 3-1. TABLE 3-1: 3-Pin Fixed Output -- Adjustable Output 1 2 3 4 -- Name SHDN VIN GND VOUT PWRGD ADJ EP Description Shutdown Control Input (active-low) Input Voltage Supply Ground Regulated Output Voltage Power Good Output Voltage Adjust/Sense Input Exposed Pad of the Package (ground potential) 1 2 3 -- -- 5 Pad Pad Pad 3.1 Input Voltage Supply (VIN) 3.4 Power Good Output (PWRGD) Connect the unregulated or regulated input voltage source to VIN. If the input voltage source is located several inches away from the LDO, or the input source is a battery, it is recommended that an input capacitor be used. A typical input capacitance value of 1 F to 10 F should be sufficient for most applications. 3.2 Shutdown Control Input (SHDN) The PWRGD output is an open-drain output used to indicate when the LDO output voltage is within 92% (typically) of its nominal regulation value. The PWRGD threshold has a typical hysteresis value of 2%. The PWRGD output is delayed by 200 s (typical) from the time the LDO output is within 92% + 3% (max hysteresis) of the regulated output value on power-up. This delay time is internally fixed. The SHDN input is used to turn the LDO output voltage on and off. When the SHDN input is at a logic-high level, the LDO output voltage is enabled. When the SHDN input is pulled to a logic-low level, the LDO output voltage is disabled. When the SHDN input is pulled low, the PWRGD output also goes low and the LDO enters a low quiescent current shutdown state where the typical quiescent current is 0.1 A. 3.5 Output Voltage Adjust Input (ADJ) For adjustable applications, the output voltage is connected to the ADJ input through a resistor divider that sets the output voltage regulation value. This provides the user the capability to set the output voltage to any value they desire within the 0.8V to 5.0V range of the device. 3.3 Ground (GND) 3.6 Regulated Output Voltage (VOUT) Connect the GND pin of the LDO to a quiet circuit ground. This will help the LDO power supply rejection ratio and noise performance. The ground pin of the LDO only conducts the quiescent current of the LDO (typically 120 A), so a heavy trace is not required. For applications have switching or noisy inputs tie the GND pin to the return of the output capacitor. Ground planes help lower inductance and voltage spikes caused by fast transient load currents and are recommended for applications that are subjected to fast load transients. The VOUT pin is the regulated output voltage of the LDO. A minimum output capacitance of 1.0 F is required for LDO stability. The MCP1827/MCP1827S is stable with ceramic, tantalum and aluminum-electrolytic capacitors. See Section 4.3 "Output Capacitor" for output capacitor selection guidance. 3.7 Exposed Pad (EP) The DDPAK and TO-220 package have an exposed tab on the package. A heat sink may be mount to the tab to aid in the removal of heat from the package during operation. The exposed tab is at the ground potential of the LDO. (c) 2007 Microchip Technology Inc. DS22001C-page 15 MCP1827/MCP1827S 4.0 DEVICE OVERVIEW EQUATION 4-2: V OUT - V ADJ R 1 = R 2 -------------------------------- V ADJ = = LDO Output Voltage ADJ Pin Voltage (typically 0.41V) The MCP1827/MCP1827S is a high output current, Low Dropout (LDO) voltage regulator. The low dropout voltage of 330 mV typical at 1.5A of current makes it ideal for battery-powered applications. Unlike other high output current LDOs, the MCP1827/MCP1827S only draws a maximum of 220 A of quiescent current. The MCP1827 has a shutdown control input and a power good output. Where: VOUT VADJ 4.1 LDO Output Voltage 4.2 Output Current and Current Limiting The 5-pin MCP1827 LDO is available with either a fixed output voltage or an adjustable output voltage. The output voltage range is 0.8V to 5.0V for both versions. The 3-pin MCP1827S LDO is available as a fixed voltage device. 4.1.1 ADJUST INPUT The MCP1827/MCP1827S LDO is tested and ensured to supply a minimum of 1.5A of output current. The MCP1827/MCP1827S has no minimum output load, so the output load current can go to 0 mA and the LDO will continue to regulate the output voltage to within tolerance. The MCP1827/MCP1827S also incorporates an output current limit. If the output voltage falls below 0.7V due to an overload condition (usually represents a shorted load condition), the output current is limited to 2.2A (typical). If the overload condition is a soft overload, the MCP1827/MCP1827S will supply higher load currents of up to 3A. The MCP1827/MCP1827S should not be operated in this condition continuously as it may result in failure of the device. However, this does allow for device usage in applications that have higher pulsed load currents having an average output current value of 1.5A or less. Output overload conditions may also result in an over-temperature shutdown of the device. If the junction temperature rises above 150C, the LDO will shut down the output voltage. See Section 4.8 "Overtemperature Protection" for more information on overtemperature shutdown. The adjustable version of the MCP1827 uses the ADJ pin (pin 5) to get the output voltage feedback for output voltage regulation. This allows the user to set the output voltage of the device with two external resistors. The nominal voltage for ADJ is 0.41V. Figure 4-1 shows the adjustable version of the MCP1827. Resistors R1 and R2 form the resistor divider network necessary to set the output voltage. With this configuration, the equation for setting VOUT is: EQUATION 4-1: R1 + R2 V OUT = V ADJ ------------------ R2 = = LDO Output Voltage ADJ Pin Voltage (typically 0.41V) Where: VOUT VADJ 4.3 MCP1827-ADJ VOUT On Off SHDN Output Capacitor 1 2345 ADJ R1 C2 1 F The MCP1827/MCP1827S requires a minimum output capacitance of 1 F for output voltage stability. Ceramic capacitors are recommended because of their size, cost and environmental robustness qualities. Aluminum-electrolytic and tantalum capacitors can be used on the LDO output as well. The Equivalent Series Resistance (ESR) of the electrolytic output capacitor must be no greater than 1 ohm. The output capacitor should be located as close to the LDO output as is practical. Ceramic materials X7R and X5R have low temperature coefficients and are well within the acceptable ESR range required. A typical 1 F X7R 0805 capacitor has an ESR of 50 milli-ohms. Larger LDO output capacitors can be used with the MCP1827/MCP1827S to improve dynamic performance and power supply ripple rejection performance. A maximum of 22 F is recommended. Aluminum-electrolytic capacitors are not recommended for low-temperature applications of 25C. (c) 2007 Microchip Technology Inc. VIN C1 4.7 F GND R2 FIGURE 4-1: Typical adjustable output voltage application circuit. The allowable resistance value range for resistor R2 is from 10 k to 200 k. Solving the equation for R1 yields the following equation: DS22001C-page 16 MCP1827/MCP1827S 4.4 Input Capacitor VPWRGD_TH VOUT TPG Low input source impedance is necessary for the LDO output to operate properly. When operating from batteries, or in applications with long lead length (> 10 inches) between the input source and the LDO, some input capacitance is recommended. A minimum of 1.0 F to 4.7 F is recommended for most applications. For applications that have output step load requirements, the input capacitance of the LDO is very important. The input capacitance provides the LDO with a good local low-impedance source to pull the transient currents from in order to respond quickly to the output load step. For good step response performance, the input capacitor should be of equivalent (or higher) value than the output capacitor. The capacitor should be placed as close to the input of the LDO as is practical. Larger input capacitors will also help reduce any high-frequency noise on the input and output of the LDO and reduce the effects of any inductance that exists between the input source voltage and the input capacitance of the LDO. VOH TVDET_PWRGD PWRGD VOL FIGURE 4-2: Power Good Timing. VIN TOR 70 s 30 s SHDN 4.5 Power Good Output (PWRGD) TPG The PWRGD output is used to indicate when the output voltage of the LDO is within 92% (typical value, see Section 1.0 "Electrical Characteristics" for Minimum and Maximum specifications) of its nominal regulation value. As the output voltage of the LDO rises, the PWRGD output will be held low until the output voltage has exceeded the power good threshold plus the hysteresis value. Once this threshold has been exceeded, the power good time delay is started (shown as TPG in the Electrical Characteristics table). The power good time delay is fixed at 200 s (typical). After the time delay period, the PWRGD output will go high, indicating that the output voltage is stable and within regulation limits. If the output voltage of the LDO falls below the power good threshold, the power good output will transition low. The power good circuitry has a 170 s delay when detecting a falling output voltage, which helps to increase noise immunity of the power good output and avoid false triggering of the power good output during fast output transients. See Figure 4-2 for power good timing characteristics. When the LDO is put into Shutdown mode using the SHDN input, the power good output is pulled low immediately, indicating that the output voltage will be out of regulation. The timing diagram for the power good output when using the shutdown input is shown in Figure 4-3. The power good output is an open-drain output that can be pulled up to any voltage that is equal to or less than the LDO input voltage. This output is capable of sinking 1.2 mA (VPWRGD < 0.4V maximum). VOUT PWRGD FIGURE 4-3: Shutdown. Power Good Timing from 4.6 Shutdown Input (SHDN) The SHDN input is an active-low input signal that turns the LDO on and off. The SHDN threshold is a percentage of the input voltage. The typical value of this shutdown threshold is 30% of VIN, with minimum and maximum limits over the entire operating temperature range of 45% and 15%, respectively. The SHDN input will ignore low-going pulses (pulses meant to shut down the LDO) that are up to 400 ns in pulse width. If the shutdown input is pulled low for more than 400 ns, the LDO will enter Shutdown mode. This small bit of filtering helps to reject any system noise spikes on the shutdown input signal. On the rising edge of the SHDN input, the shutdown circuitry has a 30 s delay before allowing the LDO output to turn on. This delay helps to reject any false turn-on signals or noise on the SHDN input signal. After (c) 2007 Microchip Technology Inc. DS22001C-page 17 MCP1827/MCP1827S the 30 s delay, the LDO output enters its soft-start period as it rises from 0V to its final regulation value. If the SHDN input signal is pulled low during the 30 s delay period, the timer will be reset and the delay time will start over again on the next rising edge of the SHDN input. The total time from the SHDN input going high (turn-on) to the LDO output being in regulation is typically 100 s. See Figure 4-4 for a timing diagram of the SHDN input. TOR 400 ns (typ) 30 s SHDN 70 s 4.8 Overtemperature Protection The MCP1827/MCP1827S LDO has temperature-sensing circuitry to prevent the junction temperature from exceeding approximately 150C. If the LDO junction temperature does reach 150C, the LDO output will be turned off until the junction temperature cools to approximately 140C, at which point the LDO output will automatically resume normal operation. If the internal power dissipation continues to be excessive, the device will again shut off. The junction temperature of the die is a function of power dissipation, ambient temperature and package thermal resistance. See Section 5.0 "Application Circuits/Issues" for more information on LDO power dissipation and junction temperature. VOUT FIGURE 4-4: Diagram. Shutdown Input Timing 4.7 Dropout Voltage and Undervoltage Lockout Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below the nominal value that was measured with a + 0.6V differential applied. The VR MCP1827/MCP1827S LDO has a very low dropout voltage specification of 330 mV (typical) at 1.5A of output current. See Section 1.0 "Electrical Characteristics" for maximum dropout voltage specifications. The MCP1827/MCP1827S LDO operates across an input voltage range of 2.3V to 6.0V and incorporates input Undervoltage Lockout (UVLO) circuitry that keeps the LDO output voltage off until the input voltage reaches a minimum of 2.18V (typical) on the rising edge of the input voltage. As the input voltage falls, the LDO output will remain on until the input voltage level reaches 2.04V (typical). Since the MCP1827/MCP1827S LDO undervoltage lockout activates at 2.04V as the input voltage is falling, the dropout voltage specification does not apply for output voltages that are less than 1.9V. For high-current applications, voltage drops across the PCB traces must be taken into account. The trace resistances can cause significant voltage drops between the input voltage source and the LDO. For applications with input voltages near 2.3V, these PCB trace voltage drops can sometimes lower the input voltage enough to trigger a shutdown due to undervoltage lockout. DS22001C-page 18 (c) 2007 Microchip Technology Inc. MCP1827/MCP1827S 5.0 5.1 APPLICATION CIRCUITS/ISSUES Typical Application The MCP1827/MCP1827S is used for applications that require high LDO output current and a power good output. VOUT = 2.5V @ 1.5A In addition to the LDO pass element power dissipation, there is power dissipation within the MCP1827/MCP1827S as a result of quiescent or ground current. The power dissipation as a result of the ground current can be calculated using the following equation: EQUATION 5-2: P I ( GND ) = V IN ( MAX ) x I VIN Where: PI(GND VIN(MAX) IVIN = = = Power dissipation due to the quiescent current of the LDO Maximum input voltage Current flowing in the VIN pin with no LDO output current (LDO quiescent current) MCP1827-2.5 On Off SHDN VIN C1 4.7 F GND 1 2345 R1 10 k C2 10 F 3.3V PWRGD FIGURE 5-1: 5.1.1 Typical Application Circuit. APPLICATION CONDITIONS Package Type = TO-220-5 Input Voltage Range = 3.3V 5% VIN maximum = 3.465V VIN minimum = 3.135V VDROPOUT (max) = 0.550V VOUT (typical) = 2.5V IOUT = 1.5A maximum PDISS (typical) = 1.2W Temperature Rise = 35.2C The total power dissipated within the MCP1827/MCP1827S is the sum of the power dissipated in the LDO pass device and the P(IGND) term. Because of the CMOS construction, the typical IGND for the MCP1827/MCP1827S is 120 A. Operating at a maximum of 3.465V results in a power dissipation of 0.49 milli-Watts. For most applications, this is small compared to the LDO pass device power dissipation and can be neglected. The maximum continuous operating junction temperature specified for the MCP1827/MCP1827S is +125C. To estimate the internal junction temperature of the MCP1827/MCP1827S, the total internal power dissipation is multiplied by the thermal resistance from junction to ambient (RJA) of the device. The thermal resistance from junction to ambient for the TO-220-5 package is estimated at 29.3 C/W. 5.2 5.2.1 Power Calculations POWER DISSIPATION EQUATION 5-3: T J ( MAX ) = P TOTAL x R JA + T AMAX TJ(MAX) = Maximum continuous junction temperature PTOTAL = Total device power dissipation RJA = Thermal resistance from junction to ambient TAMAX = Maximum ambient temperature The internal power dissipation within the MCP1827/MCP1827S is a function of input voltage, output voltage, output current and quiescent current. Equation 5-1 can be used to calculate the internal power dissipation for the LDO. EQUATION 5-1: P LDO = ( V IN ( MAX ) ) - V OUT ( MIN ) ) x I OUT ( MAX ) ) Where: PLDO VIN(MAX) VOUT(MIN) = = = LDO Pass device internal power dissipation Maximum input voltage LDO minimum output voltage (c) 2007 Microchip Technology Inc. DS22001C-page 19 MCP1827/MCP1827S The maximum power dissipation capability for a package can be calculated given the junction-to-ambient thermal resistance and the maximum ambient temperature for the application. Equation 5-4 can be used to determine the package maximum internal power dissipation. 5.3 Typical Application Internal power dissipation, junction temperature rise, junction temperature and maximum power dissipation is calculated in the following example. The power dissipation as a result of ground current is small enough to be neglected. EQUATION 5-4: P D ( MAX ) ( T J ( MAX ) - T A ( MAX ) ) = --------------------------------------------------R JA 5.3.1 Package POWER DISSIPATION EXAMPLE PD(MAX) = Maximum device power dissipation TJ(MAX) = maximum continuous junction temperature TA(MAX) = maximum ambient temperature RJA = Thermal resistance from junction to ambient Package Type = TO-220-5 Input Voltage VIN = 3.3V 5% LDO Output Voltage and Current VOUT = 2.5V IOUT = 1.5A Maximum Ambient Temperature TA(MAX) = 60C Internal Power Dissipation PLDO(MAX) = (VIN(MAX) - VOUT(MIN)) x IOUT(MAX) PLDO = ((3.3V x 1.05) - (2.5V x 0.975)) x 1.5A PLDO = 1.54 Watts EQUATION 5-5: T J ( RISE ) = P D ( MAX ) x R JA TJ(RISE) = Rise in device junction temperature over the ambient temperature PD(MAX) = Maximum device power dissipation RJA = Thermal resistance from junction to ambient 5.3.1.1 Device Junction Temperature Rise EQUATION 5-6: T J = T J ( RISE ) + T A TJ = Junction temperature TJ(RISE) = Rise in device junction temperature over the ambient temperature TA = Ambient temperature The internal junction temperature rise is a function of internal power dissipation and the thermal resistance from junction-to-ambient for the application. The thermal resistance from junction-to-ambient (RJA) is derived from EIA/JEDEC standards for measuring thermal resistance. The EIA/JEDEC specification is JESD51. The standard describes the test method and board specifications for measuring the thermal resistance from junction to ambient. The actual thermal resistance for a particular application can vary depending on many factors such as copper area and thickness. Refer to AN792, "A Method to Determine How Much Power a SOT23 Can Dissipate in an Application" (DS00792), for more information regarding this subject. TJ(RISE) = PTOTAL x RJA TJRISE = 1.54 W x 29.3 C/W TJRISE = 45.12C DS22001C-page 20 (c) 2007 Microchip Technology Inc. MCP1827/MCP1827S 5.3.1.2 Junction Temperature Estimate To estimate the internal junction temperature, the calculated temperature rise is added to the ambient or offset temperature. For this example, the worst-case junction temperature is estimated below: TJ = TJRISE + TA(MAX) TJ = 45.12C + 60.0C TJ = 105.12C As you can see from the result, this application will be operating within the maximum operating junction temperature of 125C. 5.3.1.3 Maximum Package Power Dissipation at 60C Ambient Temperature TO-220-5 (29.3 C/W RJA): PD(MAX) = (125C - 60C) / 29.3 C/W PD(MAX) = 2.218W DDPAK-5 (31.2C/Watt RJA): PD(MAX) = (125C - 60C)/ 31.2 C/W PD(MAX) = 2.083W From this table you can see the difference in maximum allowable power dissipation between the TO-220-5 package and the DDPAK-5 package. (c) 2007 Microchip Technology Inc. DS22001C-page 21 MCP1827/MCP1827S 6.0 6.1 PACKAGING INFORMATION Package Marking Information 3-Lead DDPAK (MCP1827S) Example: XXXXXXXXX XXXXXXXXX YYWWNNN 1 2 3 MCP1827S e3 0.8EEB^^ 0630256 1 2 3 3-Lead TO-220 (MCP1827S) Example: XXXXXXXXX XXXXXXXXX YYWWNNN MCP1827S 12EAB^^ e3 0630256 1 2 3 1 2 3 5-Lead DDPAK (Fixed) (MCP1827) Example: XXXXXXXXX XXXXXXXXX YYWWNNN MCP1827 e 1.0EET^^3 0630256 12345 12345 5-Lead TO-220 (Adj) (MCP1827) Example: XXXXXXXXX XXXXXXXXX YYWWNNN MCP1827 08EAT^^ e3 0630256 12345 12345 Legend: XX...X Y YY WW NNN e3 * Note: Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week `01') Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. DS22001C-page 22 (c) 2007 Microchip Technology Inc. MCP1827/MCP1827S 3-Lead Plastic (EB) [DDPAK] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging E L1 D1 H D E1 1 b e TOP VIEW b1 A N BOTTOM VIEW CHAMFER OPTIONAL c L C2 A1 Units Dimension Limits Number of Pins Pitch Overall Height Standoff Overall Width Exposed Pad Width Molded Package Length Overall Length Exposed Pad Length Lead Thickness Pad Thickness Lower Lead Width Upper Lead Width Foot Length Pad Length N e A A1 E E1 D H D1 c C2 b b1 L L1 .160 .000 .380 .245 .330 .549 .270 .014 .045 .020 .045 .068 - MIN INCHES NOM 3 .100 BSC - - - - - - - - - - - - - .190 .010 .420 - .380 .625 - .029 .065 .039 .070 .110 .067 MAX Foot Angle 0 - 8 Notes: 1. Significant Characteristic. 2. Dimensions D and E do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" per side. 3. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances. Microchip Technology Drawing C04-011B (c) 2007 Microchip Technology Inc. DS22001C-page 23 MCP1827/MCP1827S 3-Lead Plastic Transistor Outline (AB) [TO-220] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging CHAMFER OPTIONAL P E A A1 Q H1 D D1 L1 L b2 1 2 N b e e1 c A2 Units Dimension Limits Number of Pins Pitch Overall Pin Pitch Overall Height Tab Thickness Base to Lead Overall Width Mounting Hole Center Overall Length Molded Package Length Tab Length Mounting Hole Diameter Lead Length Lead Shoulder Lead Thickness Lead Width N e e1 A A1 A2 E Q D D1 H1 P L L1 c b .140 .020 .080 .357 .100 .560 .330 .230 .139 .500 - .012 .015 MIN INCHES NOM 3 .100 BSC .200 BSC - - - - - - - - - - - - .027 .190 .055 .115 .420 .120 .650 .355 .270 .156 .580 .250 .024 .040 MAX Shoulder Width b2 .045 .057 .070 Notes: 1. Dimensions D and E do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" per side. 2. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances. Microchip Technology Drawing C04-034B DS22001C-page 24 (c) 2007 Microchip Technology Inc. MCP1827/MCP1827S 5-Lead Plastic (ET) [DDPAK] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging E L1 D1 D H E1 1 b e TOP VIEW A N BOTTOM VIEW CHAMFER OPTIONAL C2 c L Units Dimension Limits MIN INCHES NOM 5 .067 BSC .160 .000 .380 .245 .330 .549 .270 .014 .045 .020 .068 - - - - - - - - - - - - - .190 .010 .420 - .380 .625 - .029 .065 .039 .110 .067 MAX A1 Number of Pins Pitch Overall Height Standoff Overall Width Exposed Pad Width Molded Package Length Overall Length Exposed Pad Length Lead Thickness Pad Thickness Lead Width Foot Length Pad Length N e A A1 E E1 D H D1 c C2 b L L1 Foot Angle 0 - 8 Notes: 1. Significant Characteristic. 2. Dimensions D and E do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" per side. 3. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances. Microchip Technology Drawing C04-012B (c) 2007 Microchip Technology Inc. DS22001C-page 25 MCP1827/MCP1827S 5-Lead Plastic Transistor Outline (AT) [TO-220] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging E P CHAMFER OPTIONAL A A1 Q H1 D D1 L 1 b 23 e e1 N c A2 Units Dimension Limits Number of Pins Pitch Overall Pin Pitch Overall Height Overall Width Overall Length Molded Package Length Tab Length Tab Thickness Mounting Hole Center Mounting Hole Diameter Lead Length Base to Bottom of Lead Lead Thickness N e e1 A E D D1 H1 A1 Q P L A2 c .140 .380 .560 .330 .204 .020 .100 .139 .482 .080 .012 MIN INCHES NOM 5 .067 BSC .268 BSC - - - - - - - - - - - .190 .420 .650 .355 .293 .055 .120 .156 .590 .115 .025 MAX Lead Width b .015 .027 .040 Notes: 1. Dimensions D and E do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" per side. 2. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances. Microchip Technology Drawing C04-036B DS22001C-page 26 (c) 2007 Microchip Technology Inc. MCP1827/MCP1827S APPENDIX A: REVISION HISTORY Revision C (February 2007) * Figure 2-22: Revised label on Y-axis. * Section 2.0 "Typical Performance Curves": Added note on Junction Temperature. * Pages 9-14: Revised notes. Revision B (September 2006) * Correction to maximum Dropout Voltage in Section 1.0. * Added additional graphs in Section 2.0. * Added disclaimer to package outline drawings. Revision A (July 2006) * Original Release of this Document. (c) 2007 Microchip Technology Inc. DS22001C-page 27 MCP1827/MCP1827S NOTES: DS22001C-page 28 (c) 2007 Microchip Technology Inc. MCP1827/MCP1827S PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device XX X X X/ XX Examples: a) b) c) d) e) f) Output Voltage *: 08 12 18 25 30 33 50 0 2 E AB AT EB ET = = = = = = = 0.8V "Standard" 1.2V "Standard" 1.8V "Standard" 2.5V "Standard" 3.0V "Standard" 3.3V "Standard" 5.0V "Standard" Output Feature Tolerance Temp. Package Voltage Code Device: MCP1827: 1.5A Low Dropout Regulator MCP1827T: 1.5A Low Dropout Regulator Tape and Reel MCP1827S: 1.5A Low Dropout Regulator MCP1827ST: 1.5A Low Dropout Regulator Tape and Reel g) h) i) *Contact factory for other output voltage options Extra Feature Code: Tolerance: Temperature: Package Type: = Fixed MCP1827-0802E/AT: 0.8V LDO Regulator 5LD TO-220 MCP1827-1002E/ET: 1.0V LDO Regulator 5LD DDPAK MCP1827-1202E/AT: 1.2V LDO Regulator 5LD TO-220 MCP1827-1802E/AT: 1.8V LDO Regulator 5LD TO-220 MCP1827-2502E/ET: 2.5V LDO Regulator 5LD DDPAK MCP1827-3002E/ET: 3.0V LDO Regulator 5LD DDPAK MCP1827-3302E/AT 3.3V LDO Regulator 5LD TO-220 MCP1827-5002E/ET: 5.0V LDO Regulator 5LD DDPAK MCP1827-ADJE/AT: ADJ LDO Regulator 5LD TO-220 MCP1827S-0802E/EB:0.8V LDO Regulator 3LD DDPAK MCP1827S-0802E/AB:0.8V LDO Regulator 3LD TO-220 MCP1827S-1002E/EB:1.0V LDO Regulator 3LD DDPAK MCP1827S-1202E/AB 1.2V LDO Regulator 3LD TO-220 MCP1827S-1802E/EB 1.8V LDO Regulator 3LD DDPAK MCP1827S-2502E/EB 2.5V LDO Regulator 3LD DDPAK MCP1827S-2502E/EB 3.0V LDO Regulator 3LD DDPAK MCP1827S-3302E/AB 3.3V LDO Regulator 3LD TO-220 MCP1827S-5002E/EB 5.0V LDO Regulator 3LD DDPAK MCP1827S-ADJE/AB ADJ LDO Regulator 3LD TO-220 a) = 2.0% (Standard) = -40C to +125C = = = = Plastic Transistor Outline, TO-220, 3-lead Plastic Transistor Outline, TO-220, 5-lead Plastic, DDPAK, 3-lead Plastic, DDPAK, 5-lead b) c) d) e) f) g) h) i) j) (c) 2007 Microchip Technology Inc. DS22001C-page 29 MCP1827/MCP1827S NOTES: DS22001C-page 30 (c) 2007 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: * * * Microchip products meet the specification contained in their particular Microchip Data Sheet. Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. Microchip is willing to work with the customer who is concerned about the integrity of their code. Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as "unbreakable." * * Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip's code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer's risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEELOQ, KEELOQ logo, microID, MPLAB, PIC, PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and SmartShunt are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AmpLab, FilterLab, Linear Active Thermistor, Migratable Memory, MXDEV, MXLAB, PS logo, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB, rfPICDEM, Select Mode, Smart Serial, SmartTel, Total Endurance, UNI/O, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. (c) 2007, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona, Gresham, Oregon and Mountain View, California. The Company's quality system processes and procedures are for its PIC(R) MCUs and dsPIC(R) DSCs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001:2000 certified. (c) 2007 Microchip Technology Inc. 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